High vacuum Electron Beam Deposition System with Residual gas analyser and ion beam source

The system is used for the various composition (metals, semiconductors and oxides) and structure film synthesis using electron beam physical vapour deposition technology.

• 304L Stainless Steel chamber (75 L volume) with large door opening (approximately 350×600 mm) and multiple customisable ports (2.75 CF) for attachment of various additional components and feedthroughs;
• Oil free high vacuum (up to 10-8 mbar) achievable by 1500 L/s cryopump;
• 3-position pneumatically actuated isolation gate valve for adjustment of pumping speed during deposition process;
• Fully integrated computer control of gas supply (two independent MFC), pumping/venting processes, pneumatic valves and safety system;
• Process Gas: 2 Channel Mass Flow Control with Pressure Control;
• System Control: PC-Based HMI, with Recipe Control and Data logging;
• 4-Pocket 8cc Electron Beam deposition source (5kW power);
• Deposition orientation: evaporation up;
• In-situ deposition rate and thin film thickness monitoring/control;
• Substrate cleaning and/or pre-treatment with Ion Source and RF Bias;
• 200 AMU residual gas analyser;
• Variable speed sample holder rotation;
• Substrate heating with Resistive Element design to heat the backside of substrate fixture and supplied with thermocouple feedback and control of temperature up to 600 °C.